2SK2372(2)-A

Renesas Electronics America Inc

Product No:

2SK2372(2)-A

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Package:

TO-3P

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Description:

DISCRETE / POWER MOSFET

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	270mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	3W (Ta), 160W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Mfr	Renesas Electronics America Inc
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk