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AIMBG120R080M1XTMA1
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AIMBG120R080M1XTMA1

Infineon Technologies

Product No:

AIMBG120R080M1XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-12

Datasheet:

-

Description:

SIC_DISCRETE

Quantity:

Delivery:

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Payment:

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In Stock : 206

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $9.239108

    $9.239108

  • 10

    $8.315197

    $83.15197

  • 50

    $7.391286

    $369.5643

  • 100

    $6.467375

    $646.7375

  • 500

    $6.282593

    $3141.2965

  • 1000

    $6.159405

    $6159.405

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C
FET Feature -
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package PG-TO263-7-12
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) -
Series CoolSiC™
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 30A
Mfr Infineon Technologies
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Tape & Reel (TR)
Base Product Number AIMBG120