Infineon Technologies
Product No:
AIMW120R035M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Datasheet:
-
Description:
1200V COOLSIC MOSFET PG-TO247-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$35.73045
$35.73045
10
$32.157405
$321.57405
50
$28.58436
$1429.218
100
$25.011315
$2501.1315
500
$24.296706
$12148.353
1000
$23.8203
$23820.3
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 46mOhm @ 25A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 10mA |
Supplier Device Package | PG-TO247-3-41 |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 228W (Tc) |
Series | Automotive, AEC-Q101, CoolSiC™ |
Package / Case | TO-247-3 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | +23V, -7V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Package | Tube |