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AIMW120R035M1HXKSA1
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AIMW120R035M1HXKSA1

Infineon Technologies

Product No:

AIMW120R035M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Datasheet:

-

Description:

1200V COOLSIC MOSFET PG-TO247-3

Quantity:

Delivery:

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Payment:

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In Stock : 138

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $35.73045

    $35.73045

  • 10

    $32.157405

    $321.57405

  • 50

    $28.58436

    $1429.218

  • 100

    $25.011315

    $2501.1315

  • 500

    $24.296706

    $12148.353

  • 1000

    $23.8203

    $23820.3

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 46mOhm @ 25A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 10mA
Supplier Device Package PG-TO247-3-41
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 228W (Tc)
Series Automotive, AEC-Q101, CoolSiC™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Mfr Infineon Technologies
Vgs (Max) +23V, -7V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube