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AIMW120R045M1XKSA1
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AIMW120R045M1XKSA1

Infineon Technologies

Product No:

AIMW120R045M1XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

Datasheet:

-

Description:

SICFET N-CH 1200V 52A TO247-3

Quantity:

Delivery:

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Payment:

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In Stock : 192

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $22.183875

    $22.183875

  • 10

    $19.965487

    $199.65487

  • 50

    $17.7471

    $887.355

  • 100

    $15.528712

    $1552.8712

  • 500

    $15.085035

    $7542.5175

  • 1000

    $14.78925

    $14789.25

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 10mA
Supplier Device Package PG-TO247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 228W (Tc)
Series Automotive, AEC-Q101, CoolSiC™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Mfr Infineon Technologies
Vgs (Max) +20V, -7V
Package Tube
Base Product Number AIMW120