BAS516,L3F
detaildesc

BAS516,L3F

Toshiba Semiconductor and Storage

Product No:

BAS516,L3F

Package:

ESC

Datasheet:

-

Description:

DIODE GEN PURP 100V 250MA ESC

Quantity:

Delivery:

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Payment:

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In Stock : 40058

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.025536

    $0.025536

  • 10

    $0.022344

    $0.22344

  • 50

    $0.019152

    $0.9576

  • 100

    $0.017556

    $1.7556

  • 500

    $0.016758

    $8.379

  • 1000

    $0.01596

    $15.96

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F 0.35pF @ 0V, 1MHz
Reverse Recovery Time (trr) 3 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package ESC
Current - Reverse Leakage @ Vr 200 nA @ 80 V
Series -
Package / Case SC-79, SOD-523
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 100 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 250mA
Operating Temperature - Junction 150°C (Max)
Base Product Number BAS516