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BSB165N15NZ3GXUMA1
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BSB165N15NZ3GXUMA1

Infineon Technologies

Product No:

BSB165N15NZ3GXUMA1

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2, CanPAK M™

Datasheet:

-

Description:

MOSFET N-CH 150V 9A/45A 2WDSON

Quantity:

Delivery:

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Payment:

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In Stock : 11832

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.625

    $5.625

  • 10

    $5.0625

    $50.625

  • 50

    $4.5

    $225

  • 100

    $3.9375

    $393.75

  • 500

    $3.825

    $1912.5

  • 1000

    $3.75

    $3750

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 110µA
Supplier Device Package MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Series OptiMOS™
Package / Case 3-WDSON
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Package Tape & Reel (TR)
Base Product Number BSB165