BSC019N04LSTATMA1

Infineon Technologies

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BSC019N04LSTATMA1

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MOSFET N-CH 40V

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Operating Temperature	-55°C ~ 175°C (TA)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4060 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	94W (Tc)
Series	-
Package / Case	-
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28A (Ta), 161A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSC019