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BSC100N10NSFGATMA1
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BSC100N10NSFGATMA1

Infineon Technologies

Product No:

BSC100N10NSFGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

Datasheet:

-

Description:

MOSFET N-CH 100V 11.4/90A 8TDSON

Quantity:

Delivery:

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Payment:

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In Stock : 8571

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2033

    $1.2033

  • 10

    $1.08297

    $10.8297

  • 50

    $0.96264

    $48.132

  • 100

    $0.84231

    $84.231

  • 500

    $0.818244

    $409.122

  • 1000

    $0.8022

    $802.2

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 110µA
Supplier Device Package PG-TDSON-8-1
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 156W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11.4A (Ta), 90A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number BSC100