BSC120N12LSGATMA1
detaildesc

BSC120N12LSGATMA1

Infineon Technologies

Product No:

BSC120N12LSGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Datasheet:

-

Description:

TRENCH >=100V PG-TDSON-8

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1988

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.23039

    $1.23039

  • 10

    $1.107351

    $11.07351

  • 50

    $0.984312

    $49.2156

  • 100

    $0.861273

    $86.1273

  • 500

    $0.836665

    $418.3325

  • 1000

    $0.82026

    $820.26

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 60 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12mOhm @ 34A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 72µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 114W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 68A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)