BSC12DN20NS3GATMA1

Infineon Technologies

Product No:

BSC12DN20NS3GATMA1

Manufacturer:

Package:

PG-TDSON-8-5

Datasheet:

Description:

MOSFET N-CH 200V 11.3A 8TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 5.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 25µA
Supplier Device Package	PG-TDSON-8-5
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	50W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	BSC12DN20