BSC160N10NS3GATMA1

Infineon Technologies

Product No:

BSC160N10NS3GATMA1

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Package:

PG-TDSON-8-1

Datasheet:

Description:

MOSFET N-CH 100V 8.8A/42A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	16mOhm @ 33A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 33µA
Supplier Device Package	PG-TDSON-8-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	60W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta), 42A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSC160