BSC16DN25NS3GATMA1

Infineon Technologies

Product No:

BSC16DN25NS3GATMA1

Manufacturer:

Package:

PG-TDSON-8-5

Datasheet:

Description:

MOSFET N-CH 250V 10.9A TDSON-8-5

Quantity:

Delivery:

Payment:

In Stock : 4069

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	165mOhm @ 5.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 32µA
Supplier Device Package	PG-TDSON-8-5
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	62.5W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10.9A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	BSC16DN25