BSC883N03LS G

Infineon Technologies

Product No:

BSC883N03LS G

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Package:

PG-TDSON-8

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.8mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PG-TDSON-8
Drain to Source Voltage (Vdss)	34 V
Power Dissipation (Max)	2.5W (Ta), 57W (Tc)
Series	OptiMOS™ 3
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 98A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk