BSH103BKR
detaildesc

BSH103BKR

Nexperia USA Inc.

Product No:

BSH103BKR

Manufacturer:

Nexperia USA Inc.

Package:

TO-236AB

Datasheet:

pdf

Description:

BSH103BK - 30 V, N-CHANNEL TRENC

Quantity:

Delivery:

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Payment:

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In Stock : 4519

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.075808

    $0.075808

  • 10

    $0.066332

    $0.66332

  • 50

    $0.056856

    $2.8428

  • 100

    $0.052118

    $5.2118

  • 500

    $0.049749

    $24.8745

  • 1000

    $0.04738

    $47.38

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 79.3 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 270mOhm @ 1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.25V @ 250µA
Supplier Device Package TO-236AB
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 330mW (Ta), 2.1W (Tc)
Series TrenchMOS™
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Mfr Nexperia USA Inc.
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)