BSM180C12P2E202
Rohm Semiconductor
Product No:
BSM180C12P2E202
Manufacturer:
Package:
Module
Datasheet:
-
Description:
SICFET N-CH 1200V 204A MODULE
Quantity:
Delivery:
Payment:
In Stock : 3
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$945
$945
10
$850.5
$8505
50
$756
$37800
100
$661.5
$66150
500
$642.6
$321300
1000
$630
$630000
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 10 V |
| FET Type | N-Channel |
| Mounting Type | Chassis Mount |
| Rds On (Max) @ Id, Vgs | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Supplier Device Package | Module |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 1360W (Tc) |
| Series | - |
| Package / Case | Module |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | +22V, -6V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Package | Tray |
| Base Product Number | BSM180 |
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