BSM180D12P3C007
detaildesc

BSM180D12P3C007

Rohm Semiconductor

Product No:

BSM180D12P3C007

Manufacturer:

Rohm Semiconductor

Package:

Module

Datasheet:

-

Description:

SIC POWER MODULE

Quantity:

Delivery:

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Payment:

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In Stock : 7

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $887.1345

    $887.1345

  • 10

    $798.42105

    $7984.2105

  • 50

    $709.7076

    $35485.38

  • 100

    $620.99415

    $62099.415

  • 500

    $603.25146

    $301625.73

  • 1000

    $591.423

    $591423

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 50mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 880W
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Rohm Semiconductor
Package Bulk
Base Product Number BSM180