BSP295L6327
detaildesc

BSP295L6327

Infineon Technologies

Product No:

BSP295L6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4-21

Datasheet:

-

Description:

SMALL-SIGNAL N-CHANNEL MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 209533

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6048

    $0.6048

  • 10

    $0.5292

    $5.292

  • 50

    $0.4536

    $22.68

  • 100

    $0.4158

    $41.58

  • 500

    $0.3969

    $198.45

  • 1000

    $0.378

    $378

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 368 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.8V @ 400µA
Supplier Device Package PG-SOT223-4-21
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1.8W (Ta)
Series SIPMOS®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk