BSS119N H7796
detaildesc

BSS119N H7796

Infineon Technologies

Product No:

BSS119N H7796

Manufacturer:

Infineon Technologies

Package:

PG-SOT23-3-5

Datasheet:

-

Description:

SMALL SIGNAL N-CHANNEL MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 14518

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.0672

    $0.0672

  • 10

    $0.0588

    $0.588

  • 50

    $0.0504

    $2.52

  • 100

    $0.0462

    $4.62

  • 500

    $0.0441

    $22.05

  • 1000

    $0.042

    $42

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 20.9 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6Ohm @ 190mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 13µA
Supplier Device Package PG-SOT23-3-5
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 500mW (Ta)
Series OptiMOS™
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk