BSS123NH6327XTSA1
detaildesc

BSS123NH6327XTSA1

Infineon Technologies

Product No:

BSS123NH6327XTSA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT23

Datasheet:

-

Description:

MOSFET N-CH 100V 190MA SOT23-3

Quantity:

Delivery:

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Payment:

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In Stock : 744

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.065261

    $0.065261

  • 10

    $0.057103

    $0.57103

  • 50

    $0.048946

    $2.4473

  • 100

    $0.044867

    $4.4867

  • 500

    $0.042827

    $21.4135

  • 1000

    $0.040788

    $40.788

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 20.9 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 0.9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6Ohm @ 190mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.8V @ 13µA
Supplier Device Package PG-SOT23
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 500mW (Ta)
Series OptiMOS™
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number BSS123