BSS169H6327XTSA1

Infineon Technologies

Product No:

BSS169H6327XTSA1

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Package:

PG-SOT23

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Description:

MOSFET N-CH 100V 170MA SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds	68 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 7 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6Ohm @ 170mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.8V @ 50µA
Supplier Device Package	PG-SOT23
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	360mW (Ta)
Series	SIPMOS®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	170mA (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSS169