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BSZ086P03NS3EGATMA1
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BSZ086P03NS3EGATMA1

Infineon Technologies

Product No:

BSZ086P03NS3EGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Datasheet:

-

Description:

MOSFET P-CH 30V 13.5A/40A TSDSON

Quantity:

Delivery:

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Payment:

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In Stock : 5870

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.6695

    $1.6695

  • 10

    $1.50255

    $15.0255

  • 50

    $1.3356

    $66.78

  • 100

    $1.16865

    $116.865

  • 500

    $1.13526

    $567.63

  • 1000

    $1.113

    $1113

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4785 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 57.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.6mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.1V @ 105µA
Supplier Device Package PG-TSDSON-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 40A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number BSZ086