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BSZ123N08NS3GATMA1
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BSZ123N08NS3GATMA1

Infineon Technologies

Product No:

BSZ123N08NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Datasheet:

-

Description:

MOSFET N-CH 80V 10A/40A 8TSDSON

Quantity:

Delivery:

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Payment:

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In Stock : 2420

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.824593

    $0.824593

  • 10

    $0.742134

    $7.42134

  • 50

    $0.659674

    $32.9837

  • 100

    $0.577215

    $57.7215

  • 500

    $0.560723

    $280.3615

  • 1000

    $0.549729

    $549.729

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12.3mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 33µA
Supplier Device Package PG-TSDSON-8
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 2.1W (Ta), 66W (Tc)
Series OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number BSZ123