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BSZ180P03NS3GATMA1
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BSZ180P03NS3GATMA1

Infineon Technologies

Product No:

BSZ180P03NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Datasheet:

-

Description:

MOSFET P-CH 30V 9A/39.6A TSDSON

Quantity:

Delivery:

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Payment:

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In Stock : 1500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.349664

    $0.349664

  • 10

    $0.305956

    $3.05956

  • 50

    $0.262248

    $13.1124

  • 100

    $0.240394

    $24.0394

  • 500

    $0.229467

    $114.7335

  • 1000

    $0.21854

    $218.54

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.1V @ 48µA
Supplier Device Package PG-TSDSON-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.6A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number BSZ180