BUK9E2R8-60E,127
NXP USA Inc.
Product No:
BUK9E2R8-60E,127
Manufacturer:
Package:
I2PAK
Datasheet:
Description:
MOSFET N-CH 60V 120A I2PAK
Quantity:
Delivery:
Payment:
In Stock : 170
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.0475
$2.0475
10
$1.84275
$18.4275
50
$1.638
$81.9
100
$1.43325
$143.325
500
$1.3923
$696.15
1000
$1.365
$1365
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 17450 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 349W (Tc) |
| Series | TrenchMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Mfr | NXP USA Inc. |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Package | Tube |
| Base Product Number | BUK9 |
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