BUZ31H3046

Infineon Technologies

Product No:

BUZ31H3046

Manufacturer:

Package:

PG-TO262-3-1

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1120 pF @ 25 V
FET Type	N-Channel
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	200mOhm @ 9A, 5V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	95W (Tc)
Series	SIPMOS®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14.5A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Bulk