DMN2005UFG-7

Diodes Incorporated

Product No:

DMN2005UFG-7

Manufacturer:

Package:

PowerDI3333-8

Datasheet:

Description:

MOSFET N-CH 20V 18.1A PWRDI3333

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6495 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.6mOhm @ 13.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	PowerDI3333-8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.05W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18.1A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	DMN2005