DMN6013LFGQ-7
detaildesc

DMN6013LFGQ-7

Diodes Incorporated

Product No:

DMN6013LFGQ-7

Manufacturer:

Diodes Incorporated

Package:

PowerDI3333-8

Datasheet:

pdf

Description:

MOSFET N-CH 60V 10.3A PWRDI3333

Quantity:

Delivery:

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Payment:

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In Stock : 1177

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.520968

    $0.520968

  • 10

    $0.455847

    $4.55847

  • 50

    $0.390726

    $19.5363

  • 100

    $0.358166

    $35.8166

  • 500

    $0.341885

    $170.9425

  • 1000

    $0.325605

    $325.605

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2577 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package PowerDI3333-8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1W (Ta)
Series Automotive, AEC-Q101
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 45A (Tc)
Mfr Diodes Incorporated
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number DMN6013