DMTH8008LPSQ-13

Diodes Incorporated

Product No:

DMTH8008LPSQ-13

Manufacturer:

Package:

PowerDI5060-8

Datasheet:

Description:

MOSFET BVDSS: 61V~100V POWERDI50

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2345 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.8mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	PowerDI5060-8
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	1.6W (Ta), 100W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	91A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)