FCA20N60-F109
detaildesc

FCA20N60-F109

onsemi

Product No:

FCA20N60-F109

Manufacturer:

onsemi

Package:

TO-3PN

Datasheet:

pdf

Description:

DISCRETE MOSFET

Quantity:

Delivery:

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In Stock : 267

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.718385

    $4.718385

  • 10

    $4.246547

    $42.46547

  • 50

    $3.774708

    $188.7354

  • 100

    $3.302869

    $330.2869

  • 500

    $3.208502

    $1604.251

  • 1000

    $3.14559

    $3145.59

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3080 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-3PN
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 208W (Tc)
Series SuperFET™
Package / Case TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk