FDB8030L
detaildesc

FDB8030L

Fairchild Semiconductor

Product No:

FDB8030L

Package:

TO-263AB

Datasheet:

-

Description:

80A, 30V, 0.0035OHM, N-CHANNEL,

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 852

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.1975

    $5.1975

  • 10

    $4.67775

    $46.7775

  • 50

    $4.158

    $207.9

  • 100

    $3.63825

    $363.825

  • 500

    $3.5343

    $1767.15

  • 1000

    $3.465

    $3465

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -65°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.5mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package TO-263AB
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 187W (Tc)
Series PowerTrench®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk
Base Product Number FDB803