FDC658AP
detaildesc

FDC658AP

onsemi

Product No:

FDC658AP

Manufacturer:

onsemi

Package:

SuperSOT™-6

Datasheet:

pdf

Description:

MOSFET P-CH 30V 4A SUPERSOT6

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1600

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.278018

    $0.278018

  • 10

    $0.243265

    $2.43265

  • 50

    $0.208513

    $10.42565

  • 100

    $0.191137

    $19.1137

  • 500

    $0.182449

    $91.2245

  • 1000

    $0.173761

    $173.761

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SuperSOT™-6
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.6W (Ta)
Series PowerTrench®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr onsemi
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number FDC658