FDD6680AS
detaildesc

FDD6680AS

onsemi

Product No:

FDD6680AS

Manufacturer:

onsemi

Package:

TO-252AA

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 5

Quantity:

Delivery:

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Payment:

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In Stock : 1708

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.273504

    $0.273504

  • 10

    $0.239316

    $2.39316

  • 50

    $0.205128

    $10.2564

  • 100

    $0.188034

    $18.8034

  • 500

    $0.179487

    $89.7435

  • 1000

    $0.17094

    $170.94

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.5mOhm @ 12.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 60W (Ta)
Series PowerTrench®, SyncFET™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk