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FF6MR12W2M1HPB11BPSA1
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FF6MR12W2M1HPB11BPSA1

Infineon Technologies

Product No:

FF6MR12W2M1HPB11BPSA1

Manufacturer:

Infineon Technologies

Package:

Module

Datasheet:

-

Description:

LOW POWER EASY

Quantity:

Delivery:

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Payment:

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In Stock : 9

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $232.1865

    $232.1865

  • 10

    $208.96785

    $2089.6785

  • 50

    $185.7492

    $9287.46

  • 100

    $162.53055

    $16253.055

  • 500

    $157.88682

    $78943.41

  • 1000

    $154.791

    $154791

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature Silicon Carbide (SiC)
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 5.63mOhm @ 200A, 15V
Product Status Active
Vgs(th) (Max) @ Id 5.55V @ 80mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V
Series HEXFET®
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max -
Current - Continuous Drain (Id) @ 25°C 200A (Tj)
Mfr Infineon Technologies
Package Tray