FQB4N80TM
detaildesc

FQB4N80TM

onsemi

Product No:

FQB4N80TM

Manufacturer:

onsemi

Package:

D²PAK (TO-263)

Datasheet:

pdf

Description:

MOSFET N-CH 800V 3.9A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 750

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.450103

    $1.450103

  • 10

    $1.305092

    $13.05092

  • 50

    $1.160082

    $58.0041

  • 100

    $1.015072

    $101.5072

  • 500

    $0.98607

    $493.035

  • 1000

    $0.966735

    $966.735

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Series QFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number FQB4N80