FQD6N60CTM
detaildesc

FQD6N60CTM

Fairchild Semiconductor

Product No:

FQD6N60CTM

Package:

TO-252, (D-Pak)

Datasheet:

-

Description:

MOSFET N-CH 600V 4A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 685

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.061077

    $1.061077

  • 10

    $0.95497

    $9.5497

  • 50

    $0.848862

    $42.4431

  • 100

    $0.742754

    $74.2754

  • 500

    $0.721533

    $360.7665

  • 1000

    $0.707385

    $707.385

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-252, (D-Pak)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 80W (Tc)
Series QFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk