FQPF2N80YDTU

Fairchild Semiconductor

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FQPF2N80YDTU

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Package:

TO-220F-3 (Y-Forming)

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Description:

MOSFET N-CH 800V 1.5A TO220F-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.3Ohm @ 750mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220F-3 (Y-Forming)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	35W (Tc)
Series	QFET®
Package / Case	TO-220-3 Full Pack, Formed Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk