FQT1N60CTF-WS

onsemi

Product No:

FQT1N60CTF-WS

Manufacturer:

Package:

SOT-223-4

Datasheet:

Description:

MOSFET N-CH 600V 200MA SOT223-4

Quantity:

Delivery:

Payment:

In Stock : 391

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11.5Ohm @ 100mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	SOT-223-4
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	2.1W (Tc)
Series	QFET®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FQT1N60