G06P01E

Goford Semiconductor

Product No:

G06P01E

Manufacturer:

Package:

SOT-23-3

Datasheet:

Description:

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

Quantity:

Delivery:

Payment:

In Stock : 2054

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1087 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	28mOhm @ 3A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1.8W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)