G080P06T

Goford Semiconductor

Product No:

G080P06T

Manufacturer:

Package:

TO-220

Datasheet:

Description:

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	15195 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	186 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7.5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	294W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube