G1K3N10LL
detaildesc

G1K3N10LL

Goford Semiconductor

Product No:

G1K3N10LL

Manufacturer:

Goford Semiconductor

Package:

SOT-23-6L

Datasheet:

pdf

Description:

MOSFET N-CH 100V 3.4A SOT-23-6L

Quantity:

Delivery:

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In Stock : 1148

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.102816

    $0.102816

  • 10

    $0.089964

    $0.89964

  • 50

    $0.077112

    $3.8556

  • 100

    $0.070686

    $7.0686

  • 500

    $0.067473

    $33.7365

  • 1000

    $0.06426

    $64.26

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 808 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-23-6L
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2.28W (Tc)
Series -
Package / Case SOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.4A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)