G230P06T
detaildesc

G230P06T

Goford Semiconductor

Product No:

G230P06T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Datasheet:

-

Description:

P-60V,-60A,RD(MAX)<20M@-10V,VTH-

Quantity:

Delivery:

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Payment:

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In Stock : 26

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6048

    $0.6048

  • 10

    $0.5292

    $5.292

  • 50

    $0.4536

    $22.68

  • 100

    $0.4158

    $41.58

  • 500

    $0.3969

    $198.45

  • 1000

    $0.378

    $378

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4499 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 115W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube