G250N03IE
detaildesc

G250N03IE

Goford Semiconductor

Product No:

G250N03IE

Manufacturer:

Goford Semiconductor

Package:

SOT-23-6L

Datasheet:

pdf

Description:

N30V,ESD 5.3A,RD<25M@10V,VTH0.5V

Quantity:

Delivery:

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In Stock : 840

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.0407

    $0.0407

  • 10

    $0.035613

    $0.35613

  • 50

    $0.030525

    $1.52625

  • 100

    $0.027981

    $2.7981

  • 500

    $0.026709

    $13.3545

  • 1000

    $0.025438

    $25.438

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 573 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.3V @ 250µA
Supplier Device Package SOT-23-6L
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.4W (Tc)
Series -
Package / Case SOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)