G25N06K
detaildesc

G25N06K

Goford Semiconductor

Product No:

G25N06K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Datasheet:

-

Description:

N60V, 25A,RD<27M@10V,VTH1.0V~2.5

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 2534

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.294

    $0.294

  • 10

    $0.25725

    $2.5725

  • 50

    $0.2205

    $11.025

  • 100

    $0.202125

    $20.2125

  • 500

    $0.192938

    $96.469

  • 1000

    $0.18375

    $183.75

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 970 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 27mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 45W (Tc)
Series G
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)