G3R160MT12D
detaildesc

G3R160MT12D

GeneSiC Semiconductor

Product No:

G3R160MT12D

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247-3

Datasheet:

pdf

Description:

SIC MOSFET N-CH 22A TO247-3

Quantity:

Delivery:

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In Stock : 1769

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.4025

    $7.4025

  • 10

    $6.66225

    $66.6225

  • 50

    $5.922

    $296.1

  • 100

    $5.18175

    $518.175

  • 500

    $5.0337

    $2516.85

  • 1000

    $4.935

    $4935

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V
Product Status Active
Vgs(th) (Max) @ Id 2.69V @ 5mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 123W (Tc)
Series G3R™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Mfr GeneSiC Semiconductor
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tube
Base Product Number G3R160