G400P06T
detaildesc

G400P06T

Goford Semiconductor

Product No:

G400P06T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Datasheet:

pdf

Description:

P-60V,-32A,RD(MAX)<40M@-10V,VTH-

Quantity:

Delivery:

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In Stock : 66

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4536

    $0.4536

  • 10

    $0.3969

    $3.969

  • 50

    $0.3402

    $17.01

  • 100

    $0.31185

    $31.185

  • 500

    $0.297675

    $148.8375

  • 1000

    $0.2835

    $283.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2598 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 40mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 110W (Tc)
Series G
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube