G5N02L
detaildesc

G5N02L

Goford Semiconductor

Product No:

G5N02L

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Datasheet:

-

Description:

N20V, 5A, RD<18M@10V,VTH0.4V~1.0

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 2011

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.0756

    $0.0756

  • 10

    $0.06615

    $0.6615

  • 50

    $0.0567

    $2.835

  • 100

    $0.051975

    $5.1975

  • 500

    $0.049613

    $24.8065

  • 1000

    $0.04725

    $47.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 18mOhm @ 4.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-23-3
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.25W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)