G60N10K
Goford Semiconductor
Product No:
G60N10K
Manufacturer:
Package:
TO-252
Datasheet:
Description:
N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Quantity:
Delivery:
Payment:
In Stock : 2107
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.609
$0.609
10
$0.532875
$5.32875
50
$0.45675
$22.8375
100
$0.418687
$41.8687
500
$0.399656
$199.828
1000
$0.380625
$380.625
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4118 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 20A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 90 V |
| Power Dissipation (Max) | 56W (Tc) |
| Series | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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