G630J
Goford Semiconductor
Product No:
G630J
Manufacturer:
Package:
TO-251
Datasheet:
Description:
N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Quantity:
Delivery:
Payment:
In Stock : 119
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.441
$0.441
10
$0.385875
$3.85875
50
$0.33075
$16.5375
100
$0.303188
$30.3188
500
$0.289406
$144.703
1000
$0.275625
$275.625
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-251 |
| Drain to Source Voltage (Vdss) | 200 V |
| Power Dissipation (Max) | 83W (Tc) |
| Series | G |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
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