G900P15T

Goford Semiconductor

Product No:

G900P15T

Manufacturer:

Package:

TO-220

Datasheet:

Description:

P-150V,-60A,RD(MAX)<80M@-10V,VTH

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3932 pF @ 75 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	80mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	100W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube