GAN080-650EBEZ
Nexperia USA Inc.
Product No:
GAN080-650EBEZ
Manufacturer:
Package:
DFN8080-8
Datasheet:
Description:
650 V, 80 MOHM GALLIUM NITRIDE (
Quantity:
Delivery:
Payment:
In Stock : 856
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$6.50475
$6.50475
10
$5.854275
$58.54275
50
$5.2038
$260.19
100
$4.553325
$455.3325
500
$4.42323
$2211.615
1000
$4.3365
$4336.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 6 V |
| Mounting Type | Surface Mount, Wettable Flank |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 6V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 30.7mA |
| Supplier Device Package | DFN8080-8 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 240W (Ta) |
| Series | - |
| Package / Case | 8-VDFN Exposed Pad |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta) |
| Mfr | Nexperia USA Inc. |
| Vgs (Max) | +7V, -6V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Package | Tape & Reel (TR) |
| Base Product Number | GAN080 |
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